Physics Assignment代写:聚合物的n-FET

2017-02-16 12:42

它是牢固地建立了从以前的一个电子移动在许多共轭聚合物的n-FET可以实现。这N传导并不仅限于一个单一的聚合物如BCB，他们也尝试过许多不同的聚合物，但这是最好的选择，因为羟基不与之前提到的令人羡慕的属性。产生的主要问题是为什么n-FET已如此难以捉摸时许多高分子材料作为栅介质。这是关注的作者在这篇文章中，他们还研究了凭借光谱法。他们发现了有趣的结果，证据清楚地表明了N的特点。作者运用多种方法论证这一行为在不同的聚合物N作为栅介质，如利用光谱分析，使用聚合物缓冲栅介质，和表面钝化和结果都是从这些基本上允许他们展示无处不在的N通道FET操作有机。由于作者创造了一个好的工作在这一领域的n-FET他们在有机半导体领域具有了什么聚合物科学家进一步信息显示N行为成功可以在不久的将来作为电介质n-FET。也由于他们的工作，有机半导体行业已被赋予了传统的工作，在n型场效应晶体管领域的主要步骤。如果主要步骤，提出了在这方面会有很大的发展领域中的场效应晶体管，它已被用于有机半导体产业的一大贡献，可以成为一个有用的资产对技术的进步，世界半导体产业的未来。

Physics Assignment代写:聚合物的n-FET

It is firmly established from the previous one that electrons are mobile in many conjugated polymers by which n-FETs can be realized. This n-FET conduction is not limited only one single polymer like BCB, they have also tried many other different polymers but BCB is the preferred choice because the hydroxyl groups are not present and the enviable attributes outlined earlier. The main question arising is why n-FETs have been so elusive when many other polymers are used as gate dielectrics. This is the concern for the authors in this article which they also studied by the virtue of the spectrometry. They found interesting results for which the evidence clearly suggests the characteristics of the n-FET. The authors have used several methods for demonstrating the behaviour of this n-FET in different polymers as gate dielectric such as using spectrometric analysis, using polymer as buffer gate dielectric, and surface passivation and the results are derived from these which substantially allowed them to demonstrate the ubiquity of n- channel organic FET operation.
Thanks to the authors for creating a work in this field of n-FETs for which they have been successful in demonstrating the n-FET behaviour in organic semiconductor field which has given the scientists further information of what polymers can be used in the near future for n-FETs used as dielectrics. And also due to their work the organic semiconductor industry have been given the primary steps for the conventional work to be carried away in the field of n-Type field effect transistors. If the primary steps are taken forward in this aspect there can be a great development in the field of field effect transistors for which it has been a major contribution for the organic semiconductor industry and can be a useful asserts towards the future of the semiconductor industry in the world of advancing technology.